NTE195A Details_NTE195A PDF Document_NTE Electronics, Inc-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	70V
Frequency - Transition	-
Noise Figure (dB Typ @ f)	-
Gain	10dB
Power - Max	8W
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 400mA, 2V
Current - Collector (Ic) (Max)	1.5A
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	TO-205AD, TO-39-3 Metal Can
Supplier Device Package	TO-39

Other

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