HFA3102BZ Details_HFA3102BZ PDF Document_Renesas Electronics America Inc-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Transistor Type	6 NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	10GHz
Noise Figure (dB Typ @ f)	1.8dB ~ 2.1dB @ 500MHz ~ 1GHz
Gain	12.4dB ~ 17.5dB
Power - Max	250mW
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 10mA, 3V
Current - Collector (Ic) (Max)	30mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	14-SOIC (0.154", 3.90mm Width)
Supplier Device Package	14-SOIC

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