AT-32011-BLKG Details_AT-32011-BLKG PDF Document_Broadcom Limited-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5.5V
Frequency - Transition	-
Noise Figure (dB Typ @ f)	1dB ~ 1.3dB @ 900MHz
Gain	12.5dB ~ 14dB
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 2mA, 2.7V
Current - Collector (Ic) (Max)	32mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-253-4, TO-253AA
Supplier Device Package	SOT-143

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