JAN2N4957UB Details_JAN2N4957UB PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - Bipolar - RF

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：20,712(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	30V
Frequency - Transition	-
Noise Figure (dB Typ @ f)	3.5dB @ 450MHz
Gain	25dB
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA, 10V
Current - Collector (Ic) (Max)	30mA
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Surface Mount
Package / Case	3-SMD, No Lead
Supplier Device Package	UB

Other

Price advantage, JAN2N4957UB is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
BFR182E6327HTSA1	Infineon Technologies	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 12V 8GHZ SOT23-3	$0.52920	In Stock:20326
MS1509	Microsemi Corporation	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 33V 500MHZ M168	No price	In Stock:20328
BFR94A,215	NXP USA Inc.	Transistors - Bipolar - RF	Datasheet	TRANS NPN 5GHZ TO-236AB	$0.14250	In Stock:10240
NE202930-A	CEL	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 6V 11GHZ 3SMINMOLD	No price	In Stock:20332
BFP 740F E6327	Infineon Technologies	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 4.7V 42GHZ 4TSFP	No price	In Stock:20334