1517-110M Details_1517-110M PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	70V
Frequency - Transition	1.48GHz ~ 1.65GHz
Noise Figure (dB Typ @ f)	-
Gain	7.3dB ~ 8.6dB
Power - Max	350W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 1A, 5V
Current - Collector (Ic) (Max)	9A
Operating Temperature	-
Mounting Type	Chassis Mount
Package / Case	55AW-1
Supplier Device Package	55AW-1

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