1214-300M Details_1214-300M PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	50V
Frequency - Transition	1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f)	-
Gain	7dB
Power - Max	88W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 500mA, 5V
Current - Collector (Ic) (Max)	4A
Operating Temperature	200°C (TJ)
Mounting Type	Chassis Mount
Package / Case	55ST
Supplier Device Package	55ST

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