CA3127MZ Details_CA3127MZ PDF Document_Rochester Electronics, LLC-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	5 NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Frequency - Transition	1.15GHz
Noise Figure (dB Typ @ f)	3.5dB @ 100MHz
Gain	27dB ~ 30dB
Power - Max	85mW
DC Current Gain (hFE) (Min) @ Ic, Vce	35 @ 5mA, 6V
Current - Collector (Ic) (Max)	20mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	16-SOIC (0.154", 3.90mm Width)
Supplier Device Package	16-SOIC

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