BFQ 19S E6327 Details_BFQ 19S E6327 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Frequency - Transition	5.5GHz
Noise Figure (dB Typ @ f)	1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
Gain	7dB ~ 11.5dB
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 70mA, 8V
Current - Collector (Ic) (Max)	210mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-243AA
Supplier Device Package	PG-SOT89

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