MRF586 Details_MRF586 PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	17V
Frequency - Transition	3GHz
Noise Figure (dB Typ @ f)	-
Gain	13.5dB
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 50mA, 5V
Current - Collector (Ic) (Max)	200mA
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	TO-205AD, TO-39-3 Metal Can
Supplier Device Package	TO-39

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