BFP842ESDH6327 Details_BFP842ESDH6327 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	3.7V
Frequency - Transition	60GHz
Noise Figure (dB Typ @ f)	0.65dB @ 3.5GHz
Gain	26dB
Power - Max	120mW
DC Current Gain (hFE) (Min) @ Ic, Vce	150 @ 15mA, 2.5V
Current - Collector (Ic) (Max)	40mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-82A, SOT-343
Supplier Device Package	SOT-343

Other

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