FZT958TC Details_FZT958TC PDF Document_Diodes Incorporated-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	PNP
Current - Collector (Ic) (Max)	500 mA
Voltage - Collector Emitter Breakdown (Max)	400 V
Vce Saturation (Max) @ Ib, Ic	240mV @ 300mA, 1A
Current - Collector Cutoff (Max)	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 500mA, 10V
Power - Max	3 W
Frequency - Transition	85MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Supplier Device Package	SOT-223

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