BC847BP Details_BC847BP PDF Document_Diotec Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	45 V
Vce Saturation (Max) @ Ib, Ic	600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 5V
Power - Max	150 mW
Frequency - Transition	300MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-101, SOT-883
Supplier Device Package	DFN1006-3

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