MJE702 Details_MJE702 PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	PNP - Darlington
Current - Collector (Ic) (Max)	4 A
Voltage - Collector Emitter Breakdown (Max)	80 V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 1.5A, 3V
Power - Max	40 W
Frequency - Transition	-
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	TO-225AA, TO-126-3
Supplier Device Package	TO-225AA

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