2N4870 Details_2N4870 PDF Document_NTE Electronics, Inc-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	PNP
Current - Collector (Ic) (Max)	-
Voltage - Collector Emitter Breakdown (Max)	-
Vce Saturation (Max) @ Ib, Ic	-
Current - Collector Cutoff (Max)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	-
Power - Max	300 mW
Frequency - Transition	-
Operating Temperature	-65°C ~ 125°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92

Other

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