NTE288H Details_NTE288H PDF Document_NTE Electronics, Inc-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	PNP
Current - Collector (Ic) (Max)	500 mA
Voltage - Collector Emitter Breakdown (Max)	350 V
Vce Saturation (Max) @ Ib, Ic	1V @ 5mA, 50mA
Current - Collector Cutoff (Max)	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 30mA, 10V
Power - Max	625 mW
Frequency - Transition	200MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92

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