NTE227 Details_NTE227 PDF Document_NTE Electronics, Inc-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	NPN
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	300 V
Vce Saturation (Max) @ Ib, Ic	1V @ 2mA, 20mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 10mA, 10V
Power - Max	850 mW
Frequency - Transition	200MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-237AA
Supplier Device Package	TO-237

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