2N3737UB Details_2N3737UB PDF Document_Microchip Technology-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Current - Collector (Ic) (Max)	1.5 A
Voltage - Collector Emitter Breakdown (Max)	40 V
Vce Saturation (Max) @ Ib, Ic	900mV @ 100mA, 1A
Current - Collector Cutoff (Max)	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 1A, 1.5V
Power - Max	500 mW
Frequency - Transition	-
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Surface Mount
Package / Case	3-SMD, No Lead
Supplier Device Package	UB

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