2N404A Details_2N404A PDF Document_NTE Electronics, Inc-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	PNP
Current - Collector (Ic) (Max)	150 mA
Voltage - Collector Emitter Breakdown (Max)	35 V
Vce Saturation (Max) @ Ib, Ic	200mV @ 1mA, 24mA
Current - Collector Cutoff (Max)	5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	-
Power - Max	150 mW
Frequency - Transition	-
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	TO-205AA, TO-5-3 Metal Can
Supplier Device Package	TO-5

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