TSC966CT B0G Details_TSC966CT B0G PDF Document_Taiwan Semiconductor Corporation-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Current - Collector (Ic) (Max)	300 mA
Voltage - Collector Emitter Breakdown (Max)	400 V
Vce Saturation (Max) @ Ib, Ic	1V @ 5mA, 50mA
Current - Collector Cutoff (Max)	1µA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA, 5V
Power - Max	1 W
Frequency - Transition	50MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92

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