JAN2N697 Details_JAN2N697 PDF Document_Microchip Technology-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	Military, MIL-PRF-19500/99
Package	Bulk
Transistor Type	NPN
Current - Collector (Ic) (Max)	-
Voltage - Collector Emitter Breakdown (Max)	40 V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max)	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 150mA, 10V
Power - Max	600 mW
Frequency - Transition	-
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-205AA, TO-5-3 Metal Can
Supplier Device Package	TO-5

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