NTE300MP Details_NTE300MP PDF Document_NTE Electronics, Inc-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	NPN
Current - Collector (Ic) (Max)	1.5 A
Voltage - Collector Emitter Breakdown (Max)	40 V
Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 1A
Current - Collector Cutoff (Max)	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	55 @ 500mA, 4V
Power - Max	7 W
Frequency - Transition	-
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	-

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