BC52PA,115 Details_BC52PA,115 PDF Document_NXP USA Inc.-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	PNP
Current - Collector (Ic) (Max)	1 A
Voltage - Collector Emitter Breakdown (Max)	60 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	63 @ 150mA, 2V
Power - Max	420 mW
Frequency - Transition	145MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	3-PowerUDFN
Supplier Device Package	3-HUSON (2x2)

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