2N3725 TIN/LEAD Details_2N3725 TIN/LEAD PDF Document_Central Semiconductor Corp-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Box
Transistor Type	NPN
Current - Collector (Ic) (Max)	1.2 A
Voltage - Collector Emitter Breakdown (Max)	50 V
Vce Saturation (Max) @ Ib, Ic	950mV @ 100mA, 1A
Current - Collector Cutoff (Max)	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 100mA, 1V
Power - Max	800 mW
Frequency - Transition	300MHz
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-205AD, TO-39-3 Metal Can
Supplier Device Package	TO-39

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