BU508A Details_BU508A PDF Document_Motorola-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	NPN
Current - Collector (Ic) (Max)	8 A
Voltage - Collector Emitter Breakdown (Max)	700 V
Vce Saturation (Max) @ Ib, Ic	1V @ 2A, 4.5A
Current - Collector Cutoff (Max)	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce	-
Power - Max	125 W
Frequency - Transition	7MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247-3

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