LS3550SB DIE Details_LS3550SB DIE PDF Document_Linear Integrated Systems, Inc.-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tray
Transistor Type	PNP
Current - Collector (Ic) (Max)	10 mA
Voltage - Collector Emitter Breakdown (Max)	40 V
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)	200pA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA, 5V
Power - Max	-
Frequency - Transition	600MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die

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