JANTX2N6351 Details_JANTX2N6351 PDF Document_Microchip Technology-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	Military, MIL-PRF-19500/472
Package	Bulk
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	5 A
Voltage - Collector Emitter Breakdown (Max)	150 V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 10mA, 5A
Current - Collector Cutoff (Max)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 5A, 5V
Power - Max	1 W
Frequency - Transition	-
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-205AC, TO-33-4 Metal Can
Supplier Device Package	TO-33

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