2SC3665-Y,T2F(J Details_2SC3665-Y,T2F(J PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Current - Collector (Ic) (Max)	800 mA
Voltage - Collector Emitter Breakdown (Max)	120 V
Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 100mA, 5V
Power - Max	1 W
Frequency - Transition	120MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	SC-71
Supplier Device Package	MSTM

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