KSA1175LTA Details_KSA1175LTA PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tape & Box (TB)
Transistor Type	PNP
Current - Collector (Ic) (Max)	150 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Vce Saturation (Max) @ Ib, Ic	300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	350 @ 1mA, 6V
Power - Max	250 mW
Frequency - Transition	180MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 Short Body
Supplier Device Package	TO-92S

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