BSP50H6327XTSA1 Details_BSP50H6327XTSA1 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	1 A
Voltage - Collector Emitter Breakdown (Max)	45 V
Vce Saturation (Max) @ Ib, Ic	1.8V @ 1mA, 1A
Current - Collector Cutoff (Max)	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce	2000 @ 500mA, 10V
Power - Max	1.5 W
Frequency - Transition	200MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Supplier Device Package	PG-SOT223-4

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