BUV26 Details_BUV26 PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	NPN
Current - Collector (Ic) (Max)	10 A
Voltage - Collector Emitter Breakdown (Max)	90 V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 1.2A, 12A
Current - Collector Cutoff (Max)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	-
Power - Max	85 W
Frequency - Transition	-
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220AB

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