2N4209 Details_2N4209 PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	PNP
Current - Collector (Ic) (Max)	50 mA
Voltage - Collector Emitter Breakdown (Max)	15 V
Vce Saturation (Max) @ Ib, Ic	150mV @ 100µA, 1mA
Current - Collector Cutoff (Max)	10nA
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 10mA, 300mV
Power - Max	300 mW
Frequency - Transition	-
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	TO-206AA, TO-18-3 Metal Can
Supplier Device Package	TO-18

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