2N5306 Details_2N5306 PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	1.2 A
Voltage - Collector Emitter Breakdown (Max)	25 V
Vce Saturation (Max) @ Ib, Ic	1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	7000 @ 2mA, 5V
Power - Max	625 mW
Frequency - Transition	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92-3

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