MJW18020G Details_MJW18020G PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	NPN
Current - Collector (Ic) (Max)	30 A
Voltage - Collector Emitter Breakdown (Max)	450 V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 4A, 20A
Current - Collector Cutoff (Max)	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce	14 @ 3A, 5V
Power - Max	250 W
Frequency - Transition	13MHz
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247

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