MJD112-001 Details_MJD112-001 PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	2 A
Voltage - Collector Emitter Breakdown (Max)	100 V
Vce Saturation (Max) @ Ib, Ic	3V @ 40mA, 4A
Current - Collector Cutoff (Max)	20µA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 2A, 3V
Power - Max	1.75 W
Frequency - Transition	25MHz
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package	I-PAK

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