2N5415 Details_2N5415 PDF Document_Solid State Inc.-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Box
Transistor Type	PNP
Current - Collector (Ic) (Max)	1 A
Voltage - Collector Emitter Breakdown (Max)	200 V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 5mA, 50mA
Current - Collector Cutoff (Max)	50µA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 50mA, 10V
Power - Max	1 W
Frequency - Transition	15MHz
Operating Temperature	200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-205AD, TO-39-3 Metal Can
Supplier Device Package	TO-39

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