2SB14160RA Details_2SB14160RA PDF Document_Panasonic Electronic Components-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Cut Tape (CT)Tape & Box (TB)
Transistor Type	PNP
Current - Collector (Ic) (Max)	3 A
Voltage - Collector Emitter Breakdown (Max)	60 V
Vce Saturation (Max) @ Ib, Ic	1.2V @ 375mA, 3A
Current - Collector Cutoff (Max)	300µA
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1A, 4V
Power - Max	1.5 W
Frequency - Transition	270MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	3-SIP
Supplier Device Package	MT-3-A1

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