NSV12100UW3TCG Details_NSV12100UW3TCG PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	PNP
Current - Collector (Ic) (Max)	1 A
Voltage - Collector Emitter Breakdown (Max)	12 V
Vce Saturation (Max) @ Ib, Ic	440mV @ 100mA, 1A
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 500mA, 2V
Power - Max	740 mW
Frequency - Transition	200MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	3-WDFN Exposed Pad
Supplier Device Package	3-WDFN (2x2)

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