2SD1863TV2Q Details_2SD1863TV2Q PDF Document_Rohm Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Cut Tape (CT)Tape & Box (TB)
Transistor Type	NPN
Current - Collector (Ic) (Max)	1 A
Voltage - Collector Emitter Breakdown (Max)	80 V
Vce Saturation (Max) @ Ib, Ic	400mV @ 20mA, 500mA
Current - Collector Cutoff (Max)	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 500mA, 3V
Power - Max	1 W
Frequency - Transition	100MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	3-SIP
Supplier Device Package	ATV

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