TIP29CTSTU Details_TIP29CTSTU PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	NPN
Current - Collector (Ic) (Max)	1 A
Voltage - Collector Emitter Breakdown (Max)	100 V
Vce Saturation (Max) @ Ib, Ic	700mV @ 125mA, 1A
Current - Collector Cutoff (Max)	300µA
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 1A, 4V
Power - Max	2 W
Frequency - Transition	3MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220-3

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