NJW21193G Details_NJW21193G PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	PNP
Current - Collector (Ic) (Max)	16 A
Voltage - Collector Emitter Breakdown (Max)	250 V
Vce Saturation (Max) @ Ib, Ic	4V @ 3.2A, 16A
Current - Collector Cutoff (Max)	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 8A, 5V
Power - Max	200 W
Frequency - Transition	4MHz
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P-3L

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