2N5962 PBFREE Details_2N5962 PBFREE PDF Document_Central Semiconductor Corp-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Current - Collector (Ic) (Max)	50 mA
Voltage - Collector Emitter Breakdown (Max)	45 V
Vce Saturation (Max) @ Ib, Ic	200mV @ 500µA, 10mA
Current - Collector Cutoff (Max)	2nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	600 @ 10mA, 5V
Power - Max	1.5 W
Frequency - Transition	100MHz
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92

Other

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