2SD1866TV2 Details_2SD1866TV2 PDF Document_Rohm Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tape & Box (TB)
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	2 A
Voltage - Collector Emitter Breakdown (Max)	60 V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 1mA, 1A
Current - Collector Cutoff (Max)	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 1A, 2V
Power - Max	1 W
Frequency - Transition	-
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	3-SIP
Supplier Device Package	ATV

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