NTE105 Details_NTE105 PDF Document_NTE Electronics, Inc-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	PNP
Current - Collector (Ic) (Max)	-
Voltage - Collector Emitter Breakdown (Max)	40 V
Vce Saturation (Max) @ Ib, Ic	300mV @ 2A, 12A
Current - Collector Cutoff (Max)	8mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 5A, 2V
Power - Max	150 W
Frequency - Transition	-
Operating Temperature	-65°C ~ 100°C (TJ)
Mounting Type	Stud Mount
Package / Case	TO-36 (2 Leads + Case)
Supplier Device Package	TO-36

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