BC850BE6327HTSA1 Details_BC850BE6327HTSA1 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	45 V
Vce Saturation (Max) @ Ib, Ic	600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 5V
Power - Max	330 mW
Frequency - Transition	250MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3

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