PN5139 Details_PN5139 PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	PNP
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	20 V
Vce Saturation (Max) @ Ib, Ic	150mV @ 100µA, 1mA
Current - Collector Cutoff (Max)	50nA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 1mA, 10V
Power - Max	625 mW
Frequency - Transition	-
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 Short Body
Supplier Device Package	TO-92S

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