FZT857TA Details_FZT857TA PDF Document_Diodes Incorporated-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)
Transistor Type	NPN
Current - Collector (Ic) (Max)	3.5 A
Voltage - Collector Emitter Breakdown (Max)	300 V
Vce Saturation (Max) @ Ib, Ic	345mV @ 600mA, 3.5A
Current - Collector Cutoff (Max)	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 500mA, 10V
Power - Max	3 W
Frequency - Transition	80MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Supplier Device Package	SOT-223

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