BCW61C Details_BCW61C PDF Document_NTE Electronics, Inc-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	PNP
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	32 V
Vce Saturation (Max) @ Ib, Ic	550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max)	20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	250 @ 2mA, 5V
Power - Max	250 mW
Frequency - Transition	100MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23

Other

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