2N3725 Details_2N3725 PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Current - Collector (Ic) (Max)	1 A
Voltage - Collector Emitter Breakdown (Max)	50 V
Vce Saturation (Max) @ Ib, Ic	950mV @ 100mA, 1A
Current - Collector Cutoff (Max)	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 100mA, 1V
Power - Max	800 mW
Frequency - Transition	-
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	TO-205AA, TO-5-3 Metal Can
Supplier Device Package	TO-5

Other

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