2N3055G Details_2N3055G PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tray
Transistor Type	NPN
Current - Collector (Ic) (Max)	15 A
Voltage - Collector Emitter Breakdown (Max)	60 V
Vce Saturation (Max) @ Ib, Ic	3V @ 3.3A, 10A
Current - Collector Cutoff (Max)	700µA
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 4A, 4V
Power - Max	115 W
Frequency - Transition	2.5MHz
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-204AA, TO-3
Supplier Device Package	TO-204 (TO-3)

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