2SD1047P-E Details_2SD1047P-E PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tray
Transistor Type	NPN
Current - Collector (Ic) (Max)	12 A
Voltage - Collector Emitter Breakdown (Max)	140 V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 500mA, 5A
Current - Collector Cutoff (Max)	100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1A, 5V
Power - Max	120 W
Frequency - Transition	15MHz
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3PB

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